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Winbond W966K6HBG pSRAM

W966K6HBG

Density2Mbit x16 CRAMStatus
Vcc1.8V / 1.8VFrequency133MHz / 70ns
PackageTemperature Range-40~85c
Feature ListW966K6HBG


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The is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.


產(chǎn)品特點(diǎn)


Supports asynchronous, page, and burst operations 
VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ 
Random access time: 70ns 
Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst 
Burst wrap or sequential 
Max clock rate: 133 MHz (tCLK = 7.5ns) 
tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz 
Low-power features: TCR, PAR, DPD 
Page mode READ access:Sixteen-word page size 
Interpage READ access: 70ns, Intrapage READ access: 20ns
Package 54VFBGA

編輯:admin  最后修改時(shí)間:2017-08-19   瀏覽:5

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